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Manufacturer
Texas InstrumentsManufacturer Product Number
CSD17313Q2T
Description
MOSFET N-CH 30V 5A 6WSON
Datasheet
CSD17313Q2T Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | NexFET™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 3V, 8V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 30mOhm @ 4A, 8V | |
| Maximum Gate Threshold Voltage at Drain Current | 1.8V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 2.7 nC @ 4.5 V | |
| Maximum Gate-Source Voltage | +10V, -8V | |
| Maximum Input Capacitance (Ciss) at Vds | 340 pF @ 15 V | |
| Maximum Power Dissipation | 2.4W (Ta), 17W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-WSON (2x2) | |
| Package / Case | 6-WDFN Exposed Pad |
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