CSD16323Q3T

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Manufacturer

Texas Instruments

Manufacturer Product Number

CSD16323Q3T

Description

PROTOTYPE

Product Attributes

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Model SeriesNexFET™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C20A (Ta), 105A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)3V, 8V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage4.5mOhm @ 24A, 8V
Maximum Gate Threshold Voltage at Drain Current1.4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs8.4 nC @ 4.5 V
Maximum Gate-Source Voltage+10V, -8V
Maximum Input Capacitance (Ciss) at Vds1300 pF @ 12.5 V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-VSON-CLIP (3.3x3.3)
Package / Case8-PowerTDFN
Active

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