CSD13202Q2T

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Manufacturer

Texas Instruments

Manufacturer Product Number

CSD13202Q2T

Description

PROTOTYPE

Product Attributes

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Model SeriesNexFET™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C14.4A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)2.5V, 4.5V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage9.3mOhm @ 5A, 4.5V
Maximum Gate Threshold Voltage at Drain Current1.1V @ 250µA
Maximum Gate Charge (Qg) @ Vgs6.6 nC @ 4.5 V
Maximum Gate-Source Voltage±8V
Maximum Input Capacitance (Ciss) at Vds997 pF @ 6 V
Maximum Power Dissipation2.7W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WSON (2x2)
Package / Case6-WDFN Exposed Pad
Active

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