STN2NE10L

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Manufacturer

STMicroelectronics

Manufacturer Product Number

STN2NE10L

Description

MOSFET N-CH 100V 1.8A SOT-223

Product Attributes

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Model SeriesSTripFET™
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage400mOhm @ 1A, 10V
Maximum Gate Threshold Voltage at Drain Current3V @ 250µA
Maximum Gate Charge (Qg) @ Vgs14 nC @ 5 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds345 pF @ 25 V
Maximum Power Dissipation2.5W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA
$0.14

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