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Manufacturer
STMicroelectronicsManufacturer Product Number
STN2NE10L
Description
MOSFET N-CH 100V 1.8A SOT-223
Datasheet
STN2NE10L Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | STripFET™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 400mOhm @ 1A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 3V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 14 nC @ 5 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 345 pF @ 25 V | |
| Maximum Power Dissipation | 2.5W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-223 | |
| Package / Case | TO-261-4, TO-261AA |
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