STH260N6F6-2

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Manufacturer

STMicroelectronics

Manufacturer Product Number

STH260N6F6-2

Description

MOSFET N-CH 60V 180A H2PAK-2

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesDeepGATE™, STripFET™ VI
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage2.4mOhm @ 60A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs183 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds11800 pF @ 25 V
Maximum Power Dissipation300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
$7.41

In-Stock: 25907

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