STD9NM50N-1

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Manufacturer

STMicroelectronics

Manufacturer Product Number

STD9NM50N-1

Description

MOSFET N-CH 500V 5A IPAK

Product Attributes

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Model SeriesMDmesh™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage560mOhm @ 3.7A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs20 nC @ 10 V
Maximum Gate-Source Voltage±25V
Maximum Input Capacitance (Ciss) at Vds570 pF @ 50 V
Maximum Power Dissipation70W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
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