STD6NM60N-1

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Manufacturer

STMicroelectronics

Manufacturer Product Number

STD6NM60N-1

Description

MOSFET N-CH 600V 4.6A IPAK

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesMDmesh™ II
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage920mOhm @ 2.3A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs13 nC @ 10 V
Maximum Gate-Source Voltage±25V
Maximum Input Capacitance (Ciss) at Vds420 pF @ 50 V
Maximum Power Dissipation45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (IPAK)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
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