STD3NM60N

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Manufacturer

STMicroelectronics

Manufacturer Product Number

STD3NM60N

Description

MOSFET N-CH 600V 3.3A DPAK

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesMDmesh™ II
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C3.3A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage1.8Ohm @ 1.65A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs9.5 nC @ 10 V
Maximum Gate-Source Voltage±25V
Maximum Input Capacitance (Ciss) at Vds188 pF @ 50 V
Maximum Power Dissipation50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
$0.42

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