SCT20N120

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Manufacturer

STMicroelectronics

Manufacturer Product Number

SCT20N120

Description

SICFET N-CH 1200V 20A HIP247

Product Attributes

TYPEDescriptionSELECT ALL
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)20V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage290mOhm @ 10A, 20V
Maximum Gate Threshold Voltage at Drain Current3.5V @ 1mA
Maximum Gate Charge (Qg) @ Vgs45 nC @ 20 V
Maximum Gate-Source Voltage+25V, -10V
Maximum Input Capacitance (Ciss) at Vds650 pF @ 400 V
Maximum Power Dissipation175W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
$10.49

In-Stock: 18980

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