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Manufacturer
Samsung Semiconductor, Inc.Manufacturer Product Number
K4B4G1646E-BYK000
Description
DDR3-1600 4GB (256MX16)1.25NS CL
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tray | |
| Part Status | Active | |
| Programmable | Not Verified | |
| Memory Type | Volatile | |
| Memory Format | DRAM | |
| Memory Size | 4Gbit | |
| Memory Organization | 256M x 16 | |
| Memory Interface | Parallel | |
| Clock Frequency | 800 MHz | |
| Supply Voltage | 1.35V | |
| Operating Temperature | 0°C ~ 95°C | |
| Mounting Type | Surface Mount | |
| Package / Case | 96-TFBGA |
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