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Manufacturer
Renesas Electronics America Inc.Manufacturer Product Number
UPA2756GR-E1-AT
Description
POWER, N-CHANNEL MOSFET
Datasheet
UPA2756GR-E1-AT Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Obsolete | |
| Technology | MOSFET (Metal Oxide) | |
| FET Feature | Logic Level Gate | |
| Configuration | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 4A | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 105mOhm @ 2A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.5V @ 1mA | |
| Maximum Gate Charge (Qg) @ Vgs | 6nC @ 10V | |
| Maximum Input Capacitance (Ciss) at Vds | 260pF @ 10V | |
| Maximum Power | 2W | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) | |
| Supplier Device Package | 8-PSOP |
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