RFD12N06RLESM9A

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Manufacturer

onsemi

Manufacturer Product Number

RFD12N06RLESM9A

Description

MOSFET N-CH 60V 18A TO252AA

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesUltraFET™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage63mOhm @ 18A, 10V
Maximum Gate Threshold Voltage at Drain Current3V @ 250µA
Maximum Gate Charge (Qg) @ Vgs15 nC @ 10 V
Maximum Gate-Source Voltage±16V
Maximum Input Capacitance (Ciss) at Vds485 pF @ 25 V
Maximum Power Dissipation49W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
$0.28

In-Stock: 175833

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