NVJD4152PT1G

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Manufacturer

onsemi

Manufacturer Product Number

NVJD4152PT1G

Description

NVJD4152 - Dual P-Channel Trench

Datasheet

noDatasheet

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesAutomotive, AEC-Q101
PackageBulk
Part StatusActive
TechnologyMOSFET (Metal Oxide)
FET FeatureStandard
Configuration2 P-Channel
Drain to Source Voltage (Vdss)20V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage260mOhm @ 880mA, 4.5V
Maximum Gate Threshold Voltage at Drain Current1.2V @ 250µA
Maximum Gate Charge (Qg) @ Vgs2.2nC @ 4.5V
Maximum Input Capacitance (Ciss) at Vds155pF @ 20V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363
$2.80

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