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Manufacturer
onsemiManufacturer Product Number
NVJD4152PT1G
Description
NVJD4152 - Dual P-Channel Trench
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | Automotive, AEC-Q101 | |
| Package | Bulk | |
| Part Status | Active | |
| Technology | MOSFET (Metal Oxide) | |
| FET Feature | Standard | |
| Configuration | 2 P-Channel | |
| Drain to Source Voltage (Vdss) | 20V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 260mOhm @ 880mA, 4.5V | |
| Maximum Gate Threshold Voltage at Drain Current | 1.2V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 2.2nC @ 4.5V | |
| Maximum Input Capacitance (Ciss) at Vds | 155pF @ 20V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
$2.80
In-Stock: 80855
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