NTMFS4931NT1G-IRH1

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Manufacturer

onsemi

Manufacturer Product Number

NTMFS4931NT1G-IRH1

Description

NTMFS4931NT1G-IRH1

Datasheet

noDatasheet

Product Attributes

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PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 246A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage1.1mOhm @ 30A, 10V
Maximum Gate Threshold Voltage at Drain Current2.2V @ 250µA
Maximum Gate Charge (Qg) @ Vgs128 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds9821 pF @ 15 V
Maximum Power Dissipation950mW (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads
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