NTMD6N02R2G

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Manufacturer

onsemi

Manufacturer Product Number

NTMD6N02R2G

Description

MOSFET 2N-CH 20V 3.92A 8SOIC

Product Attributes

TYPEDescriptionSELECT ALL
PackageTape & Reel (TR)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.92A
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage35mOhm @ 6A, 4.5V
Maximum Gate Threshold Voltage at Drain Current1.2V @ 250µA
Maximum Gate Charge (Qg) @ Vgs20nC @ 4.5V
Maximum Input Capacitance (Ciss) at Vds1100pF @ 16V
Maximum Power730mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
$0.39

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