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Manufacturer
onsemiManufacturer Product Number
NTHS2101PT1G
Description
MOSFET P-CH 8V 5.4A CHIPFET
Datasheet
NTHS2101PT1G Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 8 V | |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tj) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 1.8V, 4.5V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 25mOhm @ 5.4A, 4.5V | |
| Maximum Gate Threshold Voltage at Drain Current | 1.5V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 30 nC @ 4.5 V | |
| Maximum Gate-Source Voltage | ±8V | |
| Maximum Input Capacitance (Ciss) at Vds | 2400 pF @ 6.4 V | |
| Maximum Power Dissipation | 1.3W (Ta) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | ChipFET™ | |
| Package / Case | 8-SMD, Flat Lead |
$0.10
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