NTD12N10T4G

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Manufacturer

onsemi

Manufacturer Product Number

NTD12N10T4G

Description

MOSFET N-CH 100V 12A DPAK

Product Attributes

TYPEDescriptionSELECT ALL
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage165mOhm @ 6A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs20 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds550 pF @ 25 V
Maximum Power Dissipation1.28W (Ta), 56.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
$0.42

In-Stock: 79153

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