NDS356P

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Manufacturer

onsemi

Manufacturer Product Number

NDS356P

Description

MOSFET P-CH 20V 1.1A SUPERSOT3

Product Attributes

TYPEDescriptionSELECT ALL
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C1.1A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage210mOhm @ 1.3A, 10V
Maximum Gate Threshold Voltage at Drain Current2.5V @ 250µA
Maximum Gate Charge (Qg) @ Vgs5 nC @ 5 V
Maximum Gate-Source Voltage±12V
Maximum Input Capacitance (Ciss) at Vds180 pF @ 10 V
Maximum Power Dissipation500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3
$0.04

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