FPF2C8P2NL07A

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Manufacturer

onsemi

Manufacturer Product Number

FPF2C8P2NL07A

Description

INSULATED GATE BIPOLAR TRANSISTO

Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusActive
IGBT TypeField Stop
ConfigurationThree Phase
Maximum Collector-Emitter Breakdown Voltage650 V
Collector Current (Ic) (Max)30 A
Maximum Power135 W
Maximum Collector-Emitter On-State Voltage at Gate-Emitter Voltage and Collector Current2.2V @ 15V, 30A
Current - Collector Cutoff (Max)250 µA
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseF2 Module
Supplier Device PackageF2
Active

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