FDY1002PZ

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Manufacturer

onsemi

Manufacturer Product Number

FDY1002PZ

Description

POWER FIELD-EFFECT TRANSISTOR, P

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesPowerTrench®
PackageBulk
Part StatusActive
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C830mA
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage500mOhm @ 830mA, 4.5V
Maximum Gate Threshold Voltage at Drain Current1V @ 250µA
Maximum Gate Charge (Qg) @ Vgs3.1nC @ 4.5V
Maximum Input Capacitance (Ciss) at Vds135pF @ 10V
Maximum Power446mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563F
$0.17

In-Stock: 137133

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