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Manufacturer
onsemiManufacturer Product Number
FDP61N20
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Datasheet
FDP61N20 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | UniFET™ | |
| Package | Bulk | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 41mOhm @ 30.5A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 5V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 75 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±30V | |
| Maximum Input Capacitance (Ciss) at Vds | 3380 pF @ 25 V | |
| Maximum Power Dissipation | 417W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
$1.40
In-Stock: 51359
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Quantity
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