FDN5618P_G

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Manufacturer

onsemi

Manufacturer Product Number

FDN5618P_G

Description

MOSFET P-CH 60V 1.25A SUPERSOT3

Datasheet

noDatasheet

Product Attributes

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Model SeriesPowerTrench®
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C1.25A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage170mOhm @ 1.25A, 10V
Maximum Gate Threshold Voltage at Drain Current3V @ 250µA
Maximum Gate Charge (Qg) @ Vgs13.8 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds430 pF @ 30 V
Maximum Power Dissipation500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3
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