FDG6304P-F169

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Manufacturer

onsemi

Manufacturer Product Number

FDG6304P-F169

Description

INTEGRATED CIRCUIT

Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusObsolete
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 P-Channel (Dual)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C410mA (Ta)
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage1.1Ohm @ 410mA, 4.5V
Maximum Gate Threshold Voltage at Drain Current1.5V @ 250µA
Maximum Gate Charge (Qg) @ Vgs1.5nC @ 4.5V
Maximum Input Capacitance (Ciss) at Vds62pF @ 10V
Maximum Power300mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6
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