FDD850N10LD

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Manufacturer

onsemi

Manufacturer Product Number

FDD850N10LD

Description

MOSFET N-CH 100V 15.3A TO252-4L

Product Attributes

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Model SeriesPowerTrench®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C15.3A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage75mOhm @ 12A, 10V
Maximum Gate Threshold Voltage at Drain Current2.5V @ 250µA
Maximum Gate Charge (Qg) @ Vgs28.9 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds1465 pF @ 25 V
Maximum Power Dissipation42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
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