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Manufacturer
onsemiManufacturer Product Number
FDD6N50TM
Description
MOSFET N-CH 500V 6A DPAK
Datasheet
FDD6N50TM Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | UniFET™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 900mOhm @ 3A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 5V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 16.6 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±30V | |
| Maximum Input Capacitance (Ciss) at Vds | 9400 pF @ 25 V | |
| Maximum Power Dissipation | 89W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252AA | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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