FDD5670

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Manufacturer

onsemi

Manufacturer Product Number

FDD5670

Description

POWER FIELD-EFFECT TRANSISTOR, 2

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesPowerTrench®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C52A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)6V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage15mOhm @ 10A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs73 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds2739 pF @ 15 V
Maximum Power Dissipation3.8W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
$4.20

In-Stock: 232418

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