FDC6506P-NB4S006A

Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.

Manufacturer

onsemi

Manufacturer Product Number

FDC6506P-NB4S006A

Description

DUAL P-CHANNEL POWERTRENCH MOSFE

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesPowerTrench™
PackageBulk
Part StatusDiscontinued at
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 P-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage170mOhm @ 1.8A, 10V
Maximum Gate Threshold Voltage at Drain Current3V @ 250µA
Maximum Gate Charge (Qg) @ Vgs3.5nC @ 10V
Maximum Input Capacitance (Ciss) at Vds190pF @ 15V
Maximum Power960mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-23-6
Active

In-Stock: Scheduled Orders

Check for Additional incoming Stock

Quantity