FDC6301N_G

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Manufacturer

onsemi

Manufacturer Product Number

FDC6301N_G

Description

MOSFET 2 N-CH 25V SUPERSOT6

Datasheet

noDatasheet

Product Attributes

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PackageTape & Reel (TR)
Part StatusObsolete
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C220mA
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage4Ohm @ 400mA, 4.5V
Maximum Gate Threshold Voltage at Drain Current1.5V @ 250µA
Maximum Gate Charge (Qg) @ Vgs0.7nC @ 4.5V
Maximum Input Capacitance (Ciss) at Vds9.5pF @ 10V
Maximum Power700mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6
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