FDB3632_SB82115

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Manufacturer

onsemi

Manufacturer Product Number

FDB3632_SB82115

Description

MOSFET N-CH 100V 12A/80A D2PAK

Datasheet

noDatasheet

Product Attributes

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Model SeriesPowerTrench®
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 80A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)6V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage9mOhm @ 80A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs110 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds6000 pF @ 25 V
Maximum Power Dissipation310W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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