FDB33N25TM

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Manufacturer

onsemi

Manufacturer Product Number

FDB33N25TM

Description

POWER FIELD-EFFECT TRANSISTOR, 3

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesUniFET™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage94mOhm @ 16.5A, 10V
Maximum Gate Threshold Voltage at Drain Current5V @ 250µA
Maximum Gate Charge (Qg) @ Vgs48 nC @ 10 V
Maximum Gate-Source Voltage±30V
Maximum Input Capacitance (Ciss) at Vds2135 pF @ 25 V
Maximum Power Dissipation235W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
$0.77

In-Stock: 220261

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