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Manufacturer
onsemiManufacturer Product Number
FDB2532
Description
POWER FIELD-EFFECT TRANSISTOR, 8
Datasheet
FDB2532 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | PowerTrench® | |
| Package | Bulk | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 150 V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 79A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 6V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 16mOhm @ 33A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 4V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 107 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 5870 pF @ 25 V | |
| Maximum Power Dissipation | 310W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK (TO-263) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
$1.96
In-Stock: 66450
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