FDA20N50-F109

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Manufacturer

onsemi

Manufacturer Product Number

FDA20N50-F109

Description

MOSFET N-CH 500V 22A TO3PN

Product Attributes

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Model SeriesUniFET™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage230mOhm @ 11A, 10V
Maximum Gate Threshold Voltage at Drain Current5V @ 250µA
Maximum Gate Charge (Qg) @ Vgs59.5 nC @ 10 V
Maximum Gate-Source Voltage±30V
Maximum Input Capacitance (Ciss) at Vds3120 pF @ 25 V
Maximum Power Dissipation280W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3
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