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Manufacturer
NXP USA Inc.Manufacturer Product Number
1N4150
Description
DIODE GEN PURP 50V 200MA DO35
Datasheet
1N4150 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| Technology | Standard | |
| Maximum DC Reverse Voltage | 50 V | |
| Average Rectified Current (Io) | 200mA | |
| Maximum Forward Voltage at Forward Current | 1 V @ 200 mA | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Reverse Recovery Time (trr) | 4 ns | |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V | |
| Capacitance at Vr, F | 2.5pF @ 0V, 1MHz | |
| Mounting Type | Through Hole | |
| Package / Case | DO-204AH, DO-35, Axial | |
| Supplier Device Package | DO-35 (DO-204AH) | |
| Junction Operating Temperature | -65°C ~ 175°C |
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