
Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Microsemi CorporationManufacturer Product Number
1N6625
Description
DIODE GEN PURP 1.1KV 1A AXIAL
Datasheet
1N6625 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| Technology | Standard | |
| Maximum DC Reverse Voltage | 1100 V | |
| Average Rectified Current (Io) | 1A | |
| Maximum Forward Voltage at Forward Current | 1.75 V @ 1 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 60 ns | |
| Current - Reverse Leakage @ Vr | 1 µA @ 1100 V | |
| Capacitance at Vr, F | 10pF @ 10V, 1MHz | |
| Mounting Type | Through Hole | |
| Package / Case | A, Axial | |
| Supplier Device Package | A, Axial | |
| Junction Operating Temperature | -65°C ~ 150°C |
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