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Manufacturer
Microsemi CorporationManufacturer Product Number
1N5619US
Description
DIODE GEN PURP 600V 1A D-5A
Datasheet
1N5619US Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| Technology | Standard | |
| Maximum DC Reverse Voltage | 600 V | |
| Average Rectified Current (Io) | 1A | |
| Maximum Forward Voltage at Forward Current | 1.6 V @ 3 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 250 ns | |
| Current - Reverse Leakage @ Vr | 500 nA @ 600 V | |
| Capacitance at Vr, F | 25pF @ 12V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | SQ-MELF, A | |
| Supplier Device Package | D-5A | |
| Junction Operating Temperature | -65°C ~ 175°C |
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