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Manufacturer
Microchip TechnologyManufacturer Product Number
MSCSM120AM042CD3AG
Description
SIC 2N-CH 1200V 495A D3
Datasheet
MSCSM120AM042CD3AG Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Box | |
| Part Status | Active | |
| Technology | Silicon Carbide (SiC) | |
| Configuration | 2 N Channel (Phase Leg) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 495A (Tc) | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 5.2mOhm @ 240A, 20V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.8V @ 6mA | |
| Maximum Gate Charge (Qg) @ Vgs | 1392nC @ 20V | |
| Maximum Input Capacitance (Ciss) at Vds | 18.1pF @ 1000V | |
| Maximum Power | 2.031kW (Tc) | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | D3 |
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