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Manufacturer
Microchip TechnologyManufacturer Product Number
APT80GA90S
Description
IGBT PT MOS 8 SINGLE 900 V 80 A
Datasheet
APT80GA90S Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | POWER MOS 8® | |
| Package | Tube | |
| Part Status | Active | |
| IGBT Type | PT | |
| Maximum Collector-Emitter Breakdown Voltage | 900 V | |
| Collector Current (Ic) (Max) | 145 A | |
| Current - Collector Pulsed (Icm) | 239 A | |
| Maximum Collector-Emitter On-State Voltage at Gate-Emitter Voltage and Collector Current | 3.1V @ 15V, 47A | |
| Maximum Power | 625 W | |
| Switching Energy | 1.625mJ (on), 1.389mJ (off) | |
| Input Type | Standard | |
| Gate Charge | 200 nC | |
| Delay Time On/Off at 25°C | 18ns/149ns | |
| Test Condition | 600V, 47A, 4.7Ohm, 15V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | |
| Supplier Device Package | D3PAK |
$2.10
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