2N6512

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Manufacturer Product Number

2N6512

Description

POWER BJT

Datasheet

noDatasheet

Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusActive
Transistor TypeNPN
Collector Current (Ic) (Max)7 A
Maximum Collector-Emitter Breakdown Voltage300 V
Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current1.5V @ 800mA, 4A
DC Current Gain (hFE) Minimum @ Ic, Vce10 @ 4A, 3V
Maximum Power120 W
Frequency - Transition3MHz
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-204AD (TO-3)
$0.42

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