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Manufacturer
Microchip TechnologyManufacturer Product Number
2N6351E3
Description
POWER BJT
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| Transistor Type | NPN - Darlington | |
| Collector Current (Ic) (Max) | 5 A | |
| Maximum Collector-Emitter Breakdown Voltage | 150 V | |
| Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current | 2.5V @ 10mA, 5A | |
| Current - Collector Cutoff (Max) | 1µA | |
| DC Current Gain (hFE) Minimum @ Ic, Vce | 1000 @ 5A, 5V | |
| Maximum Power | 1 W | |
| Operating Temperature | -65°C ~ 200°C | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AC, TO-33-4 Metal Can | |
| Supplier Device Package | TO-33 |
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