2N6308T1

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Manufacturer Product Number

2N6308T1

Description

POWER BJT

Datasheet

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Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusActive
Transistor TypeNPN
Collector Current (Ic) (Max)8 A
Maximum Collector-Emitter Breakdown Voltage350 V
Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current5V @ 2.67A, 8A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) Minimum @ Ic, Vce12 @ 3A, 5V
Maximum Power125 W
Operating Temperature-65°C ~ 200°C
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-204AD (TO-3)
Active

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