2N6032

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Manufacturer Product Number

2N6032

Description

POWER BJT

Datasheet

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Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusActive
Transistor TypeNPN
Collector Current (Ic) (Max)50 A
Maximum Collector-Emitter Breakdown Voltage90 V
Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current1.3V @ 5A, 50A
Current - Collector Cutoff (Max)10mA
DC Current Gain (hFE) Minimum @ Ic, Vce10 @ 50A, 2.6V
Maximum Power140 W
Operating Temperature-65°C ~ 200°C
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-204AD (TO-3)
Active

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