2N5682E4

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Manufacturer Product Number

2N5682E4

Description

POWER BJT

Datasheet

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Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusActive
Transistor TypeNPN
Collector Current (Ic) (Max)1 A
Maximum Collector-Emitter Breakdown Voltage120 V
Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) Minimum @ Ic, Vce40 @ 250mA, 2V
Maximum Power1 W
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39 (TO-205AD)
Active

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