2N5609

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Manufacturer Product Number

2N5609

Description

POWER BJT

Datasheet

noDatasheet

Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusActive
Transistor TypePNP
Collector Current (Ic) (Max)5 A
Maximum Collector-Emitter Breakdown Voltage80 V
Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current750mV @ 250µA, 2.5mA
Maximum Power25 W
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-2
Supplier Device PackageTO-66 (TO-213AA)
$0.14

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