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Manufacturer
Microchip TechnologyManufacturer Product Number
2N5416L
Description
POWER BJT
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| Transistor Type | PNP | |
| Collector Current (Ic) (Max) | 1 A | |
| Maximum Collector-Emitter Breakdown Voltage | 300 V | |
| Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current | 2V @ 5mA, 50mA | |
| Current - Collector Cutoff (Max) | 1mA | |
| DC Current Gain (hFE) Minimum @ Ic, Vce | 30 @ 50mA, 10V | |
| Maximum Power | 750 mW | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AA, TO-5-3 Metal Can | |
| Supplier Device Package | TO-5 |
$0.42
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