2N5416L

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Manufacturer Product Number

2N5416L

Description

POWER BJT

Datasheet

noDatasheet

Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusActive
Transistor TypePNP
Collector Current (Ic) (Max)1 A
Maximum Collector-Emitter Breakdown Voltage300 V
Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current2V @ 5mA, 50mA
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) Minimum @ Ic, Vce30 @ 50mA, 10V
Maximum Power750 mW
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5
$0.42

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