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Manufacturer
Microchip TechnologyManufacturer Product Number
2N5339T3
Description
POWER BJT
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| Transistor Type | NPN | |
| Collector Current (Ic) (Max) | 5 A | |
| Maximum Collector-Emitter Breakdown Voltage | 100 V | |
| Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current | 1.2V @ 500mA, 5A | |
| Current - Collector Cutoff (Max) | 100µA | |
| DC Current Gain (hFE) Minimum @ Ic, Vce | 60 @ 2A, 2V | |
| Maximum Power | 1 W | |
| Operating Temperature | -55°C ~ 200°C | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Supplier Device Package | TO-39 (TO-205AD) |
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