2N5339P

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Manufacturer Product Number

2N5339P

Description

POWER BJT

Datasheet

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Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusActive
Transistor TypeNPN
Collector Current (Ic) (Max)5 A
Maximum Collector-Emitter Breakdown Voltage100 V
Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current1.2V @ 500mA, 5A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) Minimum @ Ic, Vce60 @ 2A, 2V
Maximum Power1 W
Operating Temperature-55°C ~ 200°C
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39 (TO-205AD)
Active

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