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Manufacturer
Microchip TechnologyManufacturer Product Number
1N6622US/TR
Description
DIODE GEN PURP 660V 1.2A A-MELF
Datasheet
1N6622US/TR Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| Technology | Standard | |
| Maximum DC Reverse Voltage | 660 V | |
| Average Rectified Current (Io) | 1.2A | |
| Maximum Forward Voltage at Forward Current | 1.4 V @ 1.2 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 30 ns | |
| Current - Reverse Leakage @ Vr | 500 nA @ 660 V | |
| Capacitance at Vr, F | 10pF @ 10V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | SQ-MELF, A | |
| Supplier Device Package | A-MELF | |
| Junction Operating Temperature | -65°C ~ 150°C |
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