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Manufacturer
International RectifierManufacturer Product Number
IRF7306PBF
Description
AUTOMOTIVE HEXFET P-CHANNEL
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Bulk | |
| Part Status | Active | |
| Technology | MOSFET (Metal Oxide) | |
| FET Feature | Logic Level Gate | |
| Configuration | 2 P-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 100mOhm @ 1.8A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 1V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 25nC @ 10V | |
| Maximum Input Capacitance (Ciss) at Vds | 440pF @ 25V | |
| Maximum Power | 2W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
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