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Manufacturer
IntersilManufacturer Product Number
RFD3055LESM9A
Description
MOSFET N-CH 60V 11A TO252AA
Datasheet
RFD3055LESM9A Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 5V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 107mOhm @ 8A, 5V | |
| Maximum Gate Threshold Voltage at Drain Current | 3V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 11.3 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±16V | |
| Maximum Input Capacitance (Ciss) at Vds | 350 pF @ 25 V | |
| Maximum Power Dissipation | 38W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252AA | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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