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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF7526D1
Description
MOSFET P-CH 30V 2A MICRO8
Datasheet
IRF7526D1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | FETKY™ | |
| Package | Tube | |
| Part Status | Obsolete | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 200mOhm @ 1.2A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 1V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 11 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 180 pF @ 25 V | |
| FET Feature | Schottky Diode (Isolated) | |
| Maximum Power Dissipation | 1.25W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Micro8™ | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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