IRF7526D1

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Manufacturer Product Number

IRF7526D1

Description

MOSFET P-CH 30V 2A MICRO8

Product Attributes

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Model SeriesFETKY™
PackageTube
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage200mOhm @ 1.2A, 10V
Maximum Gate Threshold Voltage at Drain Current1V @ 250µA
Maximum Gate Charge (Qg) @ Vgs11 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds180 pF @ 25 V
FET FeatureSchottky Diode (Isolated)
Maximum Power Dissipation1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro8™
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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